STMicroelectronics Pioneers Smaller and Faster Chargers and Power Supplies with World’s First Driver and GaN Device
September 30 2020 - 9:00AM
STMicroelectronics Pioneers Smaller and
Faster Chargers and Power Supplies with World’s First Driver and
GaN Device
- World’s first solution to integrate Si driver and GaN power
transistors in one package
- Enables chargers and adapters 80% smaller and 70% lighter,
while charging 3 times faster compared to ordinary silicon-based
solutions
Geneva, September 30, 2020 – STMicroelectronics (NYSE:
STM), a global semiconductor leader serving customers
across the spectrum of electronics applications, has unveiled
MasterGaN®, the world-first platform embedding a half-bridge driver
based on silicon technology along with a pair of
gallium-nitride (GaN) transistors. The combination will
accelerate the creation of next-generation compact and efficient
chargers and power adapters for consumer and industrial
applications up to 400W.
GaN technology enables these devices to handle more power even
as they become smaller, more lightweight, and more energy
efficient. These improvements will make a difference for smartphone
ultra-fast chargers and wireless chargers, USB-PD compact adapters
for PCs and gaming, as well as in industrial applications like
solar-energy storage systems, uninterruptible power supplies, or
high-end OLED TVs and server cloud.
Today’s GaN market is typically served by discrete power
transistors and driver ICs that require designers to learn how to
make them work together for best performance. ST’s MasterGaN
approach bypasses that challenge, resulting in faster time to
market and assured performance, together with a smaller footprint,
simplified assembly, and increased reliability with fewer
components. With GaN technology and the advantages of ST’s
integrated products, chargers and adapters can cut 80% of the size
and 70% of the weight of ordinary silicon-based solutions.
“ST’s market-unique MasterGaN platform builds on our proven
expertise and power-design skills to combine high-voltage
smart-power BCD process with GaN technology, to accelerate the
creation of space-saving and power-efficient products that are
kinder to the environment,” said Matteo Lo Presti, Executive VP and
General Manager Analog Sub-Group, STMicroelectronics.
ST is launching the new platform with MasterGaN1, which contains
two GaN power transistors connected as a half bridge with
integrated high-side and low-side drivers.
MasterGaN1 is in production now, in a 9mm x 9mm GQFN package
only 1mm high. Priced at $7 for orders of 1,000 units, it is
available from distributors.
An evaluation board is also available to help jump-start
customers’ power projects.
Further technical information:
The MasterGaN platform leverages STDRIVE 600V gate drivers and
GaN High-Electron-Mobility Transistors (HEMT). The 9mm x 9mm
low-profile GQFN package ensures high power density and is designed
for high-voltage applications with over 2mm creepage distance
between high-voltage and low-voltage pads.
The family of devices will span different GaN-transistor sizes
(RDS(ON)) and will be offered as pin-compatible half-bridge
products that let engineers scale successful designs with minimal
hardware changes. Leveraging the low turn-on losses and absence of
body-diode recovery that characterize GaN transistors, the products
offer superior efficiency and overall performance enhancement in
high-end, high-efficiency topologies such as flyback or forward
with active clamp, resonant, bridgeless totem pole PFC (power
factor corrector) and other soft- and hard-switching topologies
used in AC/DC and DC/DC converters and DC/AC inverters.
The MasterGaN1 contains two normally-off transistors that
feature closely matched timing parameters, 10A maximum current
rating, and 150mΩ on-resistance (RDS(ON)). The logic inputs are
compatible with signals from 3.3V to 15V. Comprehensive protection
features are also built in, including low-side and high-side UVLO
protection, interlocking, a dedicated shutdown pin, and
over-temperature protection.
For more information please go to www.st.com/mastergan1-pr
You can also read our blogpost at
https://blog.st.com/mastergan1/
About STMicroelectronicsAt ST, we are 46,000
creators and makers of semiconductor technologies mastering the
semiconductor supply chain with state-of-the-art manufacturing
facilities. An independent device manufacturer, we work with our
100,000 customers and thousands of partners to design and build
products, solutions, and ecosystems that address their challenges
and opportunities, and the need to support a more sustainable
world. Our technologies enable smarter mobility, more efficient
power and energy management, and the wide-scale deployment of the
Internet of Things and 5G technology. Further information can be
found at www.st.com.
For Press Information Contact: Michael
Markowitz Director Technical Media Relations STMicroelectronics
Tel: +1 781 591 0354 Email: michael.markowitz@st.com
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