onsemi’s EliteSiC Silicon Carbide Family Solutions Deliver Industry-Leading Efficiency
January 03 2023 - 11:30AM
Business Wire
New 1700 V EliteSiC devices provide reliable,
high-efficiency operation in energy infrastructure and industrial
drive applications
onsemi (Nasdaq: ON), a leader in intelligent power and
sensing technologies, today introduced “EliteSiC” as the name of
its silicon carbide (SiC) family. This week, the company will
showcase three new members of the family – the 1700 V EliteSiC
MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes – at
the Consumer Electronics Show (CES) in Las Vegas. The new devices
provide reliable, high-efficiency performance for energy
infrastructure and industrial drive applications and highlight
onsemi’s position as a leader in industrial silicon carbide
solutions.
With the 1700 V EliteSiC MOSFET (NTH4L028N170M1), onsemi
delivers higher breakdown voltage (BV) SiC solutions, required for
high-power industrial applications. The two 1700 V avalanche-rated
EliteSiC Schottky diodes (NDSH25170A, NDSH10170A) allow designers
to achieve stable high-voltage operation at elevated temperatures
while offering high efficiency enabled by SiC.
“By providing best-in-class efficiency with reduced power
losses, the new 1700 V EliteSiC devices reinforce the high
standards of superior performance and quality for products in our
EliteSiC family as well as further expand the depth and breadth of
onsemi’s EliteSiC,” said Simon Keeton, executive vice president and
general manager, Power Solutions Group, onsemi. “Together with our
end-to-end SiC manufacturing capabilities, onsemi offers the
technology and supply assurance to meet the needs of industrial
energy infrastructure and industrial drive providers.”
Renewable energy applications are consistently moving to higher
voltages with solar systems from 1100 V to 1500 V DC Buses. To
support this change, customers require MOSFETs with a higher BV.
The new 1700 V EliteSiC MOSFET offers a maximum Vgs range of -15
V/25 V, making it suitable for fast switching applications where
gate voltages are increasing to -10V, delivering increased system
reliability.
At a test condition of 1200 V at 40 Amps, the 1700 V EliteSiC
MOSFET achieves a gate charge (Qg) of 200 nC – which is
market-leading compared to equivalent competitive devices that are
closer to 300 nC. A low Qg is critical to achieving high efficiency
in fast switching, high-power renewable energy applications.
At a BV rating of 1700 V, the EliteSiC Schottky diode devices
offer improved margin between the maximum reverse voltage (VRRM)
and the peak repetitive reverse voltage of the diode. The new
devices also provide excellent reverse leakage performance with a
maximum reverse current (IR) of just 40 µA at 25°C and 100 µA at
175°C – significantly better than competitive devices that are
often rated at 100 µA at 25°C.
Learn more about onsemi EliteSiC solutions at onsemi.com or
visit us at CES 2023, in Las Vegas, NV, January 5-8.
About onsemi
onsemi (Nasdaq: ON) is driving disruptive innovations to
help build a better future. With a focus on automotive and
industrial end-markets, the company is accelerating change in
megatrends such as vehicle electrification and safety, sustainable
energy grids, industrial automation, and 5G and cloud
infrastructure. onsemi offers a highly differentiated and
innovative product portfolio, delivering intelligent power and
sensing technologies that solve the world’s most complex challenges
and leads the way to creating a safer, cleaner, and smarter world.
onsemi is recognized as a Fortune 500® company and included
in the S&P 500® index. Learn more about onsemi at
www.onsemi.com.
onsemi and the onsemi logo are trademarks of
Semiconductor Components Industries, LLC. All other brand and
product names appearing in this document are registered trademarks
or trademarks of their respective holders. Although the Company
references its website in this news release, information on the
website is not to be incorporated herein.
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version on businesswire.com: https://www.businesswire.com/news/home/20230103005609/en/
Stefanie Cuene Head of Public Relations onsemi (602)
315-3778 Stefanie.Cuene@onsemi.com
Parag Agarwal Vice President - Investor Relations &
Corporate Development onsemi (602) 244-3437 investor@onsemi.com
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