Everspin Releases Design Guide for using 1 Gb STT-MRAM with Xilinx DDR4 FPGA Controller
January 21 2020 - 8:00AM
Business Wire
Everspin continues building ecosystem with
strategic partnerships to bring 1 Gb STT-MRAM to the storage
industry
Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading
developer and manufacturer of Magnetoresistive RAM (MRAM), today
announced a comprehensive design guide to streamline the
integration of its 1 Gigabit (Gb) Spin-transfer Torque
Magnetoresistive Random Access Memory (STT-MRAM) product in the
storage marketplace. Xilinx, Inc., the leader in adaptive and
intelligent computing, has been supporting Everspin’s STT-MRAM for
two generations and enables the 1 Gb STT-MRAM solution using its
DDR4 controller in the Xilinx Vivado development environment.
This press release features multimedia. View
the full release here:
https://www.businesswire.com/news/home/20200121005129/en/
Everspin's 1 Gb STT-MRAM Component
(Photo: Business Wire)
The Everspin and Xilinx integrated solution provides many
benefits, with the design guide and tools structured to
address:
- Timing: Reducing operating frequency, increasing row access
timing, increasing counter widths and reducing CAS page sizes
- Power-Up: Enabling anti-scribble mode during calibration
- Power-Down: Scramming or moving all relevant data into the
persistent memory array
- Performance: Increasing pipeline depth and data transfer
efficiency
- Scripts: Providing Verilog models and other detailed
information to get storage OEM’s design up and running
effectively
“MRAM and persistent memory is an increasingly important
technology across a broad range of solutions,” said Jamon Bowen,
Planning and Storage Segment Director, Data Center Group, Xilinx.
“We see many applications where advanced capabilities like power
loss protection is critical. It’s exciting to see partners like
Everspin make it easy for customers to develop world-class memory
sub-systems leveraging the Xilinx platform.”
Everspin’s STT-MRAM devices allow enterprise infrastructure and
data center providers to increase the reliability and performance
of systems where high-performance data persistence is critical.
This is achieved by delivering protection against power loss
without the use of supercapacitors or batteries. In addition, the
larger density 1 Gb part offers more effective management of I/O
streams, creating a greater level of latency determinism and
allowing storage OEMs to significantly improve quality of service
of their products. Similar benefits can also be achieved using the
1 Gb STT-MRAM device as a persistent data write buffer in storage
and fabric accelerators, computational storage, and other
applications.
“We value our partnership with Xilinx and continue to
collaborate with them to bring our STT-MRAM solutions to market,”
said Troy Winslow, Vice President of Sales and Marketing for
Everspin. “Providing this design guide and tools will help
streamline integration and time to market for our customers in
providing enhanced applications for data centers.”
Additional Resources
- Everspin ST-DDR4 Design Guide for Xilinx FPGA Controllers
- Everspin Builds Ecosystem for 1-Gigabit Spin-transfer Torque
Magnetoresistive Random Access Memory (STT-MRAM)
- Everspin Achieves Data Center OEM qualification of its 1Gb
STT-MRAM Solution
- Everspin Blog
About Everspin Technologies Everspin Technologies, Inc. is the
world’s leading provider of Magnetoresistive RAM (MRAM), delivering
unprecedented performance, non-volatility, endurance and
reliability for applications where data persistence is paramount.
Headquartered in Chandler, Arizona, Everspin is transforming the
memory market with the largest and most diverse foundation of MRAM
customers. For more information, visit www.everspin.com. NASDAQ:
MRAM.
Cautionary Statement Regarding Forward-Looking Statements
This press release contains forward-looking statements regarding
future events that involve risks and uncertainties that could cause
actual results or events to differ materially from the expectations
disclosed in the forward-looking statement, including, but not
limited to; the anticipated market adoption of Everspin’s products
and technology at the rate Everspin expects; the ability for
Everspin to expand the markets Everspin addresses at the rate it
expects; the risk that unexpected technical difficulties may
develop in the final stages of development or production of its
products, or when Everspin’s customers may ship in volume. Readers
are advised that they should not place undue reliance on these
forward-looking statements and should review the risk factors
included in Everspin’s Form 10-Q filed with the Securities and
Exchange Commission on Nov 7, 2019, under the caption “Risk
Factors.” Subsequent events may cause these expectations to change,
and Everspin disclaims any obligations to update or alter these
forward-looking statements in the future, whether as a result of
new information, future events or otherwise.
View source
version on businesswire.com: https://www.businesswire.com/news/home/20200121005129/en/
Rainier Communications Marianne Sabella Dempsey/Joanne Stanway
617-223-8675/978-273-1473 everspin@rainierco.com
Everspin Technologies (NASDAQ:MRAM)
Historical Stock Chart
From Mar 2024 to Apr 2024
Everspin Technologies (NASDAQ:MRAM)
Historical Stock Chart
From Apr 2023 to Apr 2024