LINTHICUM, Md., March 23, 2015
/PRNewswire/ -- Northrop Grumman Corporation (NYSE: NOC)
recently completed qualification testing of the W28C0108 1Mbit
electrically erasable programmable read-only memory (EEPROM)
semiconductor device for radiation-hardened space applications.
Radiation hardened EEPROMs have long been used in space to hold
critical mission data for decades without excessive shielding,
rewrite circuits or climate controls.
Key features of the company's semiconductor device include
latch-up immune operation in a space environment, greater than
10,000 endurance cycles, less than 250 nanosecond READ access time,
300 krad (Si) total ionizing dose and Joint Electron Device
Engineering Council (JEDEC) pin-compatibility in the center 32
pins. The device is a 1Mbit, 128K x 8 bit CMOS (complementary metal
oxide semiconductor) EEPROM, based on Northrop Grumman's existing
256 kB EEPROM part (W28C256) and operates across the full military
temperature range.
Results indicate that memory retention at 125 degrees C will
last for more than 200 years, which is well beyond the current
state of the art for nonvolatile memory chips. The device was
manufactured at Northrop Grumman's Advanced Technology Laboratories
and was designed in cooperation with Sandia National Laboratories
in Albuquerque, N.M.
The device underwent dynamic life testing at 150 degrees C for
1,000 hours, as well as heavy ion latch-up and other testing.
Northrop Grumman is currently taking orders for this
product. A copy of the part qualification data package is
available upon request via the Northrop Grumman website.
Northrop Grumman is a leading global security company providing
innovative systems, products and solutions in unmanned systems,
cyber, C4ISR, and logistics and modernization to government and
commercial customers worldwide. Please visit
http://www.northropgrumman.com for more information.
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SOURCE Northrop Grumman Corporation