Spin Transfer Technologies Develops 20nm Magnetic Tunnel Junction MRAM Technology at On-site R&D Fab
September 27 2016 - 9:00AM
Business Wire
Startup Moves to Commercialization Phase,
Initiates Sampling Program
Spin Transfer Technologies, Inc. (STT), a leading developer of
breakthrough Orthogonal Spin Transfer Magneto-Resistive Random
Access Memory technology (OST-MRAM™), today announced it has
fabricated perpendicular MRAM magnetic tunnel junctions (MTJs) as
small as 20nm — among the smallest MTJs reported — at its
state-of-the-art development fab at the company’s Silicon Valley
headquarters. The MTJ is the primary component of an MRAM memory
cell and is the core technology of an MRAM device.
STT has had working ST-MRAM memory chips internally for some
time, and based on requests from certain major semiconductor and
systems companies, the company is now preparing to deliver fully
functional samples to select customers. STT has moved its MRAM
technology from R&D to commercialization largely on the
strength of development done at its magnetics R&D fab, located
at the company’s headquarters in Fremont, California. This R&D
fab includes state-of-the-art process and analysis equipment,
enabling the company to compress engineering development cycles to
10 days that otherwise would have taken several months.
“Since the beginning of the year, we’ve been able to process
more than 40 wafer lots, an achievement that likely would have
taken more than three years without our on-site R&D fab,” said
Barry Hoberman, CEO of STT. “In just four years, STT has taken the
journey from incubation to commercialization. We are excited to
enter the next phase of the company’s evolution.”
STT’s patented OST-MRAM has the potential to replace major
segments of the market for Flash, SRAM and DRAM semiconductors in
applications such as mobile products, automotive, Internet of
Things (IoT) and data storage. Compared with conventional spin
transfer MRAM approaches, the STT OST-MRAM devices are expected to
offer advantages in speed, power efficiency, cost, reliability and
scalability. In addition, the company’s successful integration of
magnetics and CMOS demonstrates the capability of the technology to
operate in memory arrays with existing process standards and move
quickly into high-volume production.
Initial samples of STT’s fully functional MRAM memories are
targeted for non-volatile memory applications. The company is
currently preparing evaluation boards to enable customers to fully
evaluate the parameters of the memory.
STT’s development has been fueled by a venture capital structure
led by Allied Minds, and to date, STT has received $108M in
aggregate funding from its investors. This level of commitment has
not only enabled STT to build its development fab, but also to
assemble a world-class team of experts in the fields of magnetics
and CMOS memory technology.
The STT leadership team also includes Chief Technology Officer
and Senior Vice President of Magnetics Technology Mustafa
Pinarbasi, a pioneer and innovator in magnetic thin films who spent
nearly two decades as a leading technologist at IBM and Hitachi
Global Storage Technologies (GST); Vice President of Memory
Integration Amitay Levi, a 28-year veteran of advanced technology
development in non-volatile memory; and Senior Vice President of IC
Product Development Les Crudele, who has more than 40 years of
experience in semiconductor development.
The company’s technology was originally developed from research
conducted in the laboratory of Professor Andrew Kent at New York
University. Spin Transfer Technologies was formed and incubated by
Boston-based Allied Minds in 2007 and first attracted direct
institutional investment in 2012.
More information about the company can be found at
www.spintransfer.com.
Spin Transfer Technologies is a subsidiary of Boston-based
Allied Minds (LSE: ALM).
About Spin Transfer Technologies
Spin Transfer Technologies, Inc. was established by Allied Minds
and New York University to develop and commercialize its Orthogonal
Spin Transfer Magneto-Resistive Random Access Memory technology,
OST-MRAM™. The technology, invented by Professor Andrew Kent, is a
disruptive innovation in the field of spin-transfer-based MRAM
devices, enabling faster switching times, lower power operation,
lower manufactured device cost, and scalability to smaller
lithographic dimensions. For more information, visit
www.spintransfer.com.
About Allied Minds
Allied Minds is a diversified holding company focused on venture
creation within the life science and technology sectors. With
unparalleled access to hundreds of university and federal labs
across the U.S., Allied Minds forms, funds, and operates a
portfolio of companies to generate long-term value for its
investors and stakeholders. Based in Boston, with nationwide
presence in Los Angeles and New York, Allied Minds supports its
businesses with capital, central management, and shared services.
For more information, please visit www.alliedminds.com.
Allied Minds Forward-looking Statement
This press release contains statements that are or may be
forward-looking statements, including statements that relate to the
company’s future prospects, developments and strategies. The
forward-looking statements are based on current expectations and
are subject to known and unknown risks and uncertainties that could
cause actual results, performance and achievements to differ
materially from current expectations, including, but not limited
to, those risk and uncertainties described in the risk factors
included in the company’s regulatory filings. These forward-looking
statements are based on assumptions regarding the present and
future business strategies of the company and the environment in
which it will operate in the future. Each forward-looking statement
speaks only as at the date of this press release. Except as
required by law, regulatory requirement, the Listing Rules and the
Disclosure and Transparency Rules, neither the company nor any
other party intends to update or revise these forward-looking
statements, whether as a result of new information, future events
or otherwise.
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