Applied Materials' Breakthrough Patterning Hardmask Enables Copper Interconnect Scaling
May 19 2015 - 3:05AM
- New hardmask technology is
essential for patterning closely spaced, thin interconnects to 10nm
and beyond
- Underscores PVD leadership with
system now tool of record for multiple device generations at
leading chipmakers
SANTA CLARA, Calif., May 19, 2015 - Applied
Materials, Inc. today announced its Applied Endura® Cirrus(TM)
HTX PVD* system with breakthrough technology for
patterning copper interconnects at 10nm and beyond. As chip
features continue to shrink, innovations in hardmask are required
to preserve the pattern integrity of tightly packed, tiny
interconnect structures. With the introduction of this technology,
Applied enables scaling of the TiN* metal hardmask - the industry's
material of choice - to meet the patterning needs of copper
interconnects in advanced microchips.
"Precision engineering of metal hardmask films is
key to addressing the patterning challenges for advanced
interconnects," said Dr. Sundar Ramamurthy, vice president and
general manager of Applied's Metal Deposition Products business
unit. "The Cirrus HTX TiN product represents Applied's decades of
expertise in applying PVD technology for engineering TiN film
properties. Incorporating our unique VHF*-based technology offers
customers the flexibility of tuning stress in TiN films from
compressive to tensile to overcome their specific integration
challenges."
Today's advanced microchips can pack 20 kilometers
of copper wiring in a 100 square millimeter area, stacked in 10
layers with up to 10 billion vias or vertical connections between
layers. The role of the metal hardmask is to preserve the integrity
of these patterned lines and vias in soft ULK* dielectrics.
However, with scaling, the compressive stress from conventional TiN
hardmask layers can cause the narrow lines patterned in ULK films
to deform or collapse. The tunable Cirrus HTX TiN hardmask with
high etch selectivity delivers superior CD* line width control and
via overlay alignment resulting in yield improvement.
This breakthrough in TiN hardmask is made possible
by precision materials engineering at the wafer level to produce a
high density, low-stress film. Combining exceptional film thickness
uniformity with low defectivity on a proven Endura platform, the
Cirrus HTX system addresses the stringent high volume manufacturing
needs of patterning multiple interconnect layers.
Applied Materials, Inc. (Nasdaq:AMAT) is the
global leader in precision materials engineering solutions for the
semiconductor, flat panel display and solar photovoltaic
industries. Our technologies help make innovations like
smartphones, flat screen TVs and solar panels more affordable and
accessible to consumers and businesses around the world. Learn more
at www.appliedmaterials.com.
*PVD=physical
vapor deposition; TiN=titanium nitride; VHF=very high frequency;
ULK=ultra-low k; CD=critical dimension
# # #
Contact:
Connie Duncan (editorial/media) 408.563.6209
Michael Sullivan (financial community) 408.986.7977
PHOTO: Applied Endura® Cirrus HTX
PVD System
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Source: Applied Materials via Globenewswire
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