TIDMALM
RNS Number : 6264T
Allied Minds PLC
16 October 2017
Spin Transfer Technologies and Tokyo Electron join forces to
bring MRAM to the next level
SRAM-like ST-MRAM brings significant cost and power benefits
over conventional SRAM
Boston - 16 October 2017 - Allied Minds (ALM: LSE) subsidiary
Spin Transfer Technologies, Inc. (STT) and Tokyo Electron Ltd.
(TEL) are pleased to announce that they have today signed an
agreement for a collaborative engineering program for
next-generation SRAM and DRAM-class ST-MRAM devices. The agreement
will further the advance of ST-MRAM, a new class of
high-performance, persistent memory devices, to provide previously
unachievable levels of speed, density, and endurance. The
combination of STT's ST-MRAM technology and TEL's advanced PVD MRAM
deposition tool will allow the companies to quickly develop
processes for the highest density and endurance devices. Both
companies are allocating resources to this project, with STT
contributing its high-speed, high-endurance perpendicular magnetic
tunnel junction (pMTJ) design and device fabrication technology,
and TEL utilizing its industry-leading ST-MRAM deposition tool and
knowledge of unique formation capabilities of magnetic films. This
agreement aligns with each company's goal of offering compelling
solutions for the embedded SRAM, and eventually stand-alone DRAM,
markets.
SRAM is pervasive in nearly all mobile, computing and industrial
applications. SRAM is a fast and high-endurance memory, but it is
costly, drains much power and is volatile. ST-MRAM, being more
compact, is less costly, requires little power when storing data
and is nonvolatile, retaining data for long periods without power.
Further improvements especially in terms of fast switching and
endurance are needed, however, to fully match or exceed SRAM
performance.
STT and TEL will demonstrate solutions that are far denser than
other ST-MRAM solutions while eliminating barriers to replacing
SRAM. These sub-30nm pMTJ's, 40 to 50 percent smaller than other
commercial solutions, should be attractive to advanced logic-ICs
and a significant step toward making DRAM-class ST-MRAM
devices.
"Industries have outgrown the capabilities of SRAM and DRAM
leaving the market open for the next generation of technology,"
said Tom Sparkman, CEO of STT. "Having TEL, the world's leading
ST-MRAM deposition equipment supplier, as a partner speeds up the
development of STT's technology for replacing SRAM and DRAM. We
believe the adoption of ST-MRAM will materially exceed current
expectations, and we are excited to work with TEL to revolutionize
the ST-MRAM market by achieving the speed, density and endurance
the industry needs."
"Together with STT's team of experts, device fabrication
know-how and its on-site development fab, we expect to accelerate
the development of high-performance, high-density MRAM devices for
the SRAM market and ultimately the DRAM replacement market." said
Yoichi Ishikawa, vice president, PVD Dept. of TEL's Thin Film
Formation Business Unit. "We thank STT for recognizing the
performance of and for choosing our advanced MRAM deposition system
for this purpose."
ENDS
For more information, please contact:
Allied Minds plc
Neil Pizey, Head of Corporate
Development +44 7771 872 922
FTI Consulting
Ben Atwell / Brett Pollard +44 20 3727 1000
About Allied Minds
Based in Boston, Allied Minds plc is an IP commercialisation
company focused on technology and life sciences. With extensive
access to U.S. federal government laboratories and universities, as
well as partnerships with leading U.S. corporations, Allied Minds
forms, funds, and operates a portfolio of companies with the
objective of delivering successful liquidity events that will
generate attractive long-term returns for its investors and
stakeholders. Allied Minds supports its businesses with capital,
resources, and expertise. For more information, please visit
www.alliedminds.com
About Spin Transfer Technologies
Spin Transfer Technologies, Inc. (STT) is developing ST-MRAM
technologies that uniquely combine patented magnetics technologies,
circuits and memory architectures to create the industry's
lowest-cost, highest-performance ST-MRAM memories. STT's disruptive
ST-MRAM solutions are ideal replacements for embedded SRAMs as well
as future DRAM devices. The company was established by Allied Minds
and New York University. For more information, please visit
www.spintransfer.com
About TEL
Tokyo Electron Limited (TEL), established in 1963, is a leading
company of innovative semiconductor and flat panel display (FPD)
production equipment worldwide. All of TEL's semiconductor and FPD
production equipment product lines maintain high market shares in
their respective global segments. TEL has research &
development, manufacturing, sales, and service locations all over
the world. For more information, please visit www.tel.com
About SRAM
SRAM is pervasively used in virtually all mobile, computing, and
industrial applications. SRAM is a fast memory that never wears
out, but has the drawbacks of being very costly, very wasteful of
power, and is not persistent. On the other hand, traditional
ST-MRAM is much smaller and lower cost, uses no power when storing
data, and holds data for a long period when power is removed.
Unfortunately, conventional ST-MRAM does not match the benefits of
SRAM - it lacks speed and wears out in seconds or minutes of
operation rather than operating reliably for over 10 years of
continuous use. STT has developed unique technologies to make
ST-MRAM have similar lifetime and speed as SRAM.
About DRAM
DRAM is the electronics industry's most widely used memory type
and is present in nearly all electronic systems. DRAM is a slower
but much less expensive memory than SRAM, and otherwise shares SRAM
characteristics of long life, power inefficiency, and lack of
persistence.
Allied Minds Forward-Looking Statement
This press release contains statements that are or may be
forward-looking statements, including statements that relate to
Allied Minds' future prospects, developments and strategies. The
forward-looking statements are based on current expectations and
are subject to known and unknown risks and uncertainties that could
cause actual results, performance and achievements to differ
materially from current expectations, including, but not limited
to, those risks and uncertainties described in the risk factors
included in Allied Minds' regulatory filings. These forward-looking
statements are based on assumptions regarding the present and
future business strategies of Allied Minds and the environment in
which it will operate in the future. Each forward-looking statement
speaks only as at the date of this press release. Except as
required by law, regulatory requirement, the Listing Rules and the
Disclosure Guidance and Transparency Rules, neither Allied Minds
nor any other party intends to update or revise these
forward-looking statements, whether as a result of new information,
future events or otherwise.
This information is provided by RNS
The company news service from the London Stock Exchange
END
MSCUVUARBKARAUA
(END) Dow Jones Newswires
October 16, 2017 02:59 ET (06:59 GMT)
Allied Minds (LSE:ALM)
Historical Stock Chart
From Mar 2024 to Apr 2024
Allied Minds (LSE:ALM)
Historical Stock Chart
From Apr 2023 to Apr 2024