Applied Materials' Chorng-Ping Chang Named 2016 IEEE Fellow
December 15 2015 - 7:30AM
- Recognized for outstanding
technical contributions in two of the most challenging areas of
CMOS scaling
SANTA CLARA, Calif., December 15, 2015 - Applied
Materials, Inc. today announced that Dr. Chorng-Ping Chang, who
leads the company's strategic external research with universities
and industry consortia, has been named a 2016 IEEE Fellow. Dr.
Chang is being recognized for his contributions to "replacement
gate and shallow trench isolation for CMOS technology," which have
had a profound impact on the advancement of integrated circuit (IC)
fabrication. The IEEE Grade of Fellow is conferred by the IEEE
Board of Directors upon a person with an outstanding record of
accomplishments in any of the IEEE fields of interest. IEEE Fellow
is the highest grade of membership and is recognized by the
technical community as a prestigious honor and an important career
achievement. The total number selected in any one year cannot
exceed one-tenth of one-percent of the total voting membership.
"Chorng-Ping's brilliant work helped the industry
adopt novel methods in CMOS scaling and made important
contributions to the performance, functionality and size of the
electronic products we use every day," said Dr. Om Nalamasu, senior
vice president and CTO of Applied Materials. "I commend him on this
well-deserved honor and for his efforts leading Applied Materials'
collaborations with universities and consortia."
Dr. Chang's outstanding technical contributions
and extensive semiconductor industry community service span nearly
three decades. While working at Bell Laboratories he led pioneering
research that helped the industry through one of the most
significant transitions in the history of CMOS technology - the
shift from the gate-first to the gate-last (replacement gate)
process. His work on extending the use of replacement gate
technology continued at Applied Materials, and today virtually all
state-of-the-art CMOS logic devices, including FinFET transistors,
use replacement gate technology. In addition, early on in his
career Dr. Chang made pivotal contributions in deposition, etching
and advanced plasma processing technologies.
Another critical area where Dr. Chang made
significant contributions is advanced shallow trench isolation
(STI). He led an early detailed study that demonstrated how
changing the shape of the top trench corners helped resolve serious
issues of defect density, junction leakage and device threshold
voltage control. This research had a long-term impact on the
robustness and extendibility of STI in mainstream CMOS
manufacturing, to the extent that major CMOS process technologies
introduced in recent years have used STI corner engineering
techniques developed by Dr. Chang and his team.
Dr. Chang has served the IEEE community in several
facets throughout his career, including as editor of IEEE Electron
Device Letters for 12 years. He has also been a member of the
program committees of various international technical conferences
on IC technology, and is currently the U.S. Chair of the
International Technology Roadmap for Semiconductors (ITRS) Process,
Integration, Devices and Structures Chapter. Dr. Chang holds a
bachelor's degree from National Tsing Hua University and a Ph.D. in
engineering from the University of California, Berkeley.
Applied Materials, Inc. (Nasdaq:AMAT) is the
global leader in materials engineering solutions for the
semiconductor, flat panel display and solar photovoltaic
industries. Our technologies help make innovations like
smartphones, flat screen TVs and solar panels more affordable and
accessible to consumers and businesses around the world. Learn more
at www.appliedmaterials.com.
# # #
Contact:
Kevin Winston (editorial/media) 408.235.4498
Michael Sullivan (financial community) 408.986.7977
PHOTO: Dr. Chorng-Ping Chang,
Applied Materials
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Source: Applied Materials via Globenewswire
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