Applied Materials Unveils Breakthrough E-Beam Metrology Tool for FinFET Transistors and 3D NAND Devices
February 23 2015 - 7:30AM
- New VeritySEM® 5i
is the industry's first in-line 3D CD SEM metrology system for
volume production of advanced 3D devices
- Proprietary electron-filtering
technology for high-aspect-ratio imaging, coupled with high
resolution and tilted electron beam enable in-line 3D metrology
SANTA CLARA, Calif., February 23, 2015 - At
the SPIE* Advanced Lithography conference in San Jose, Calif.,
Applied Materials, Inc., today announced the industry's first
in-line 3D CD SEM* metrology tool for solving the challenges of
measuring the high aspect ratio and complex features of 3D NAND and
FinFET devices. The new Applied VeritySEM® 5i system
offers state-of-the-art high-resolution imaging and backscattered
electron (BSE) technology that enable exceptional CD control
in-line. Using the VeritySEM 5i system can speed up
chipmakers' process development and production ramp,
and improve device performance and yield in high-volume
production.
"Complex 3D structures require new
measurement dimensions, increasing the demands placed on
metrology technologies," said Itai Rosenfeld, corporate vice
president and general manager of Applied's Process Diagnostics
and Control group. "Continuing to rely on traditional CD SEM
techniques to measure 3D devices is virtually impossible.
Offering imaging innovations based on Applied's expertise in
advanced e-beam technology and image processing for fast,
accurate on-device CD SEM metrology, allows our customers
to see, measure and control their 3D device during R&D, ramp
and volume production. Multiple customers using the tool are
already benefiting from better yields with these new 3D
devices. This system should continue to set the benchmark for
the industry as chipmakers require new precision materials
engineering capabilities to transition to 3D architectures and
scale beyond the 10nm node."
Innovations in metrology precision are needed to
improve device performance, reduce variability and boost yields of
increasingly intricate high-performance, high-density 3D
devices. An advanced high-resolution SEM column, tilted beam
and BSE imaging give the VeritySEM 5i system its unique 3D
metrology capability to measure and monitor the most vital and
challenging FinFET and 3D NAND structures in-line. Specifically,
BSE imaging for via-in-trench bottom CD enables chipmakers to
ensure connectivity between underlying and overlaying metal layers.
For controlling FinFET sidewall, as well as gate and fin height,
where the smallest variation impacts device performance and yield,
the VeritySEM 5i tool's tilt-beam provides exact, repeatable
in-line measurements. High-resolution BSE imaging
enables continued vertical scaling through enhanced
sensitivity for measuring the asymmetrical sidewall
and bottom CDs of 3D NAND devices with very high aspect
ratios reaching up to 60:1 and beyond.
Applied Materials, Inc. (Nasdaq:AMAT) is the
global leader in precision materials engineering solutions for the
semiconductor, flat panel display and solar photovoltaic
industries. Our technologies help make innovations like
smartphones, flat screen TVs and solar panels more affordable and
accessible to consumers and businesses around the world. Learn more
at www.appliedmaterials.com.
*SPIE = International Society for Optics and Photonics; CD SEM =
critical dimension scanning electron microscope
# # #
Contact:
Connie Duncan (editorial/media) 408.563.6209
Michael Sullivan (financial community) 408.986.7977
PHOTO: Applied Materials VeritySEM®
5i system
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Source: Applied Materials via Globenewswire
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